View STRH100N6FSY3_3907483.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

november 2007 rev 5 1/13 13 strh100n6fsy1 STRH100N6FSY3 n-channel 60v - 0.011 ? - to-254aa rad-hard low gate charge stripfet? power mosfet features low r ds(on) fast switching single event effect (see) hardned low total gate charge light weight 100% avalanche tested application oriented characterization hermetically sealed heavy ion soa 100 krad tid sel & segr with 34me v/cm2/mg let ions applications satellite high reliability description this power mosfet series realized with stmicroelectronics unique stripfet process has specifically been designed to sustain high tid and provide immunity to heavy ion effects. it is therefore suitable as powe r switch in mainly high- efficiency dc-dc converters. it is also intended for any application with low gate charge drive requirements. figure 1. internal schematic diagram type v dss strh100n6fsy1 60 v STRH100N6FSY3 60 v to-254aa 1 2 3 table 1. device summary order codes marking package packaging strh100n6fsy1 (1) rh100n6fsy1 to-254aa individual strip pack STRH100N6FSY3 (2) rh100n6fsy3 to-254aa individual strip pack 1. mil temp range 2. space flights parts (full escc flow screening) www.st.com
contents strh100n6fsy1 - STRH100N6FSY3 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 post-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
strh100n6fsy1 - strh100n6 fsy3 electrical ratings 3/13 1 electrical ratings table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v gs gate-source voltage 14 v i d (1) 1. this value is limited by package drain current (continuous) at t c = 25 c 80 a i d (1) drain current (continuous) at t c = 100 c 68 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 320 a p tot (3) 3. this value is rated according to rthj-case + rthc-s total dissipation at t c = 25 c 180 w dv/dt (4) 4. i sd 80 a, di/dt 600 a/s, v dd = 80 %v (br)dss peak diode recovery voltage slope 2.5 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max 0.52 c/w rthc-s case-to-sink typ 0.21 c/w rthj-amb thermal resistance junction-amb max 48 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 40 a e as single pulse avalanche energy (starting tj=25 c, id= iar, vdd=32 v) 1374 mj e ar (1) 1. pulse number = 10; f= 10 khz; d.c. = 50% repetitive avalanche 40 mj
electrical characteristics strh100n6fsy1 - STRH100N6FSY3 4/13 2 electrical characteristics (t case = 25c unless otherwise specified) 2.1 pre-irradiation table 5. on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 14 v 100 na bv dss drain-to-source breakdown voltage v gs = 0v, i d = 1 ma 60 v v gs(th) gate threshold voltage v ds =v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on resistance v gs = 12 v i d = 40 a 0.011 0.012 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v gs = 0, v ds = 25 v, f=1mhz 5440 902.4 316 6800 1128 395 8160 1353 474 pf pf pf q g q gs q gd total gate charge gate-to-source charge gate-to-drain (?miller?) charge v dd = 30 v, i d = 40 a, v gs =12 v 142.8 26.08 42.4 178.5 32.6 53 214.2 39.12 63.6 nc nc nc r g gate input resistance f=1mhz gate dc bias=0 test signal level= 20 mv open drain 1.6 2 2.4 ? table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 30 v, i d = 40 a, r g = 4.7 ?, v gs = 12 v 25.6 78.4 102 64 32 98 128 80 38.4 117.6 153.6 96 ns ns ns ns
strh100n6fsy1 - STRH100N6FSY3 electrical characteristics 5/13 2.2 post-irradiation the st rad-hard power mosf ets are tested to verify the radiation capability. the technology is extremely resistant to assurance well functioning of the device inside the radiation environments. every manufacturing lot is tested for total ionizing dose. (@tj=25c up to 100 krad (a) ) table 8. source drain diode symbol parameter test conditions min. typ. max unit i sd (1) i sdm (2) 1. this value is limited by package 2. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 80 320 a a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 80 a, v gs = 0 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s v dd = 30 v, tj = 25 c 345 432 3.5 26 518 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s v dd = 30 v, tj = 150 c 422 528 4.9 30.8 633 ns c a a. according to escc 22900 specification, co60 gamma rays, dose rags:0.1rad/sec. table 9. on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 14 v 100 na bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma 60 v v gs(th) gate threshold voltage v ds =v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on resistance v gs = 12 v i d = 40 a 0.011 0.012 ?
electrical characteristics strh100n6fsy1 - STRH100N6FSY3 6/13 figure 2. bias conditi on during radiation table 10. single event effect, soa (1) 1. rad-hard power mosfets have been characterized in heavy ion environment for single event effect (see). single event effect characterization is illustrated ion let (mev/(mg/cm2)) energy (mev) range (m) v ds (v) @v gs 0v kr 34 316 43 60 xe 55.9 459 43 60 table 11. source drain diode symbol parameter test conditions min. typ. max unit i sd (1) i sdm (2) 1. this value is limited by package 2. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 80 320 a a v sd (3) 3. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 80 a, v gs = 0 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s v dd = 30 v, tj = 25 c 345 432 3.5 26 518 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s v dd = 30 v, tj = 150 c 422 528 4.9 30.8 633 ns c a
strh100n6fsy1 - STRH100N6FSY3 electrical characteristics 7/13 2.3 electrical characteri stics (curves) figure 3. safe operating area figure 4. thermal impedance figure 5. output characteristics figure 6. transfer characteristics figure 7. gate charge vs gate-source voltage figure 8. capacitance variations
electrical characteristics strh100n6fsy1 - STRH100N6FSY3 8/13 figure 9. normalized bv dss vs temperature figure 10. static drain-source on resistance figure 11. normalized gate threshold voltage vs temperature figure 12. normalized on resistance vs temperature figure 13. source drain-diode forward characteristics
strh100n6fsy1 - strh100 n6fsy3 test circuit 9/13 3 test circuit figure 14. switching times test circuit for resistive load (1) 1. max driver v gs slope = 1v/ns (no dut) figure 15. unclamped inductive load test circuit (single pulse and repetitive)
package mechanical data strh100n6fsy1 - STRH100N6FSY3 10/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
strh100n6fsy1 - strh100n6f sy3 package mechanical data 11/13 figure 16. mechanical drawing table 12. to-254aa mechanical data dim. mm. inch min. typ max. min. typ. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 0.535 0.545 c 20.07 20.32 0.790 0.80 d 6.32 6.60 0.249 0.260 e 1.02 1.27 0.040 0.050 f 3.53 3.78 0.139 0.149 g 16.89 17.40 0.665 0.685 h6.86 0.270 i 0.89 1.14 0.035 0.045 j3.81 0.150 k3.81 0.150 l 12.95 14.50 0.510 0.570 m3.05 0.120 n0.710.025 r1 1.0 0.040 r2 1.65 0.065
revision history strh100n6fsy1 - STRH100N6FSY3 12/13 5 revision history table 13. document revision history date revision changes 03-jul-2006 1 first release 18-dec-2006 2 figure 3. has been updated 15-mar-2007 3 complete version 22-oct-2007 4 note 2 on device summary has been updated 15-nov-2007 5 added figures: 2 and 15 . updated values on tables: 6 , 7 , 8 and 11 minor text changes to improve readability
strh100n6fsy1 - STRH100N6FSY3 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STRH100N6FSY3

	To Download STRH100N6FSY3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .